华东师范大学学报(自然科学版) ›› 2005, Vol. 2005 ›› Issue (1): 68-72,1.

• 物理学 电子科学技术 • 上一篇    下一篇

非晶FeCuNbSiB多层膜的巨磁阻抗效应(英)

Oumarou M,李晓东,袁望治,阮建中,赵振杰,杨燮龙   

  1. 华东师范大学 物理系，上海200062
  • 收稿日期:2003-09-04 修回日期:2003-10-25 出版日期:2005-03-25 发布日期:2005-03-25
  • 通讯作者: 袁望治

GMI Effect Study of Amorphous FeCuNbSiB Multilayered Films(English)

Oumarou M,LI Xiao-dong,YUAN Wang-zhi,RUAN Jian-zhong,ZHAO Zhen-jie,YANG Xie-long   

  1. Department of Physics, East China Normal University, Shanghai200062, China
  • Received:2003-09-04 Revised:2003-10-25 Online:2005-03-25 Published:2005-03-25
  • Contact: YUAN Wang-zhi

摘要： 研究在250℃退火温度下非晶FeCuNbSiB薄膜的巨磁阻抗效应.X-ray谱和Mössbauer谱显示样品为非晶状态.导电层的厚度为2μm，磁性层的厚度为1μm.三明治结构的最大阻抗效应为20%.为了提高巨磁阻抗效应，在两磁性层之间加入了绝缘层SiO2，在250℃退火温度下最大阻抗效应为62%.随着驱动电流频率的增大，磁阻抗效应曲线由随磁场的单调下降变为出现峰的结构.

关键词: 巨磁阻抗效应, 多层膜, 磁控溅射, FeCuNbSiB, 绝缘层, 巨磁阻抗效应, 多层膜, 磁控溅射, FeCuNbSiB, 绝缘层

Abstract: Giant magneto-impedance (GMI) has been observed in amorphous FeCuNbSiB/Cu/FeCuNbSiB sandwiched films annealed at 250℃.The conductive layer is about 2μm while the outer magnetic layers are about 1μm thick each. The GMI ratio of 20% has been obtained. In the goal to improve this ratio, two insulator layers have been used between the different layers followed by an annealing process at 250℃.A GMI ratio of 62% has been obtained. The displacement of GMI peaks with increasing of driving current frequency appears also. The amorphous state of the films was confirmed by an X-ray diffraction and Mössbauer spectrum.

Key words: multilayered films, magnetron sputtering, FeCuNbSiB, insulator layer, GMI effect, multilayered films, magnetron sputtering, FeCuNbSiB, insulator layer

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