当今各类计算机应用都进入一个飞速发展的阶段，无论是“计算密集型”还是“存储密集型”应用都对存储系统的容量、性能以及功耗不断提出更高的要求. 然而，由于传统内存工艺(DRAM)的发展落后于计算逻辑工艺（CMOS），基于DRAM的内存设计逐渐无法满足这些设计需求. 同时，基于HDD的外存性能与DRAM主存间的差距也逐渐增加. 而各种非易失存储工艺取得长足的进步，为解决这一问题提供了新的机遇. 本文就近年来针对非易失内存的结构和系统级设计与优化的研究工作进行综述，揭示非易失内存对存储系统的性能、功耗等都有明显的改善.

With the rapid improvement of modern computing applications, there is an increasing requirement of capacity, performance, and power consumption of memory system for both “computingintensive” and “dataintensive” applications. However, main memory based on traditional DRAM technology cannot fully satisfy the requirement because the improvement of DRAM technology is slower than that of CMOS technology. Moreover, it becomes even worse since the performance gap between HDD based storage and DRAM based main memory keeps increasing at the same time. Recently, the substantial progress of various nonvolatile memory technologies has provided an opportunity to mitigate this problem. This paper  presents a survey of recent architecture and system level research work on nonvolatile main memory. It shows that different types of nonvolatile main memory can help improve performance and reduce power consumption of memory system significantly.