应用物理学

基于Pd/SiNWs/pSi结构的高灵敏常温氢气传感器

  • 朱李斯 ,
  • 杨婷 ,
  • 张健
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  • 华东师范大学 电子工程系,上海200241

收稿日期: 2014-09-03

  网络出版日期: 2015-12-23

High sensitive room temperature hydrogen sensor based on Pd/SiNWs/pSi structure

  • ZHU Li-Si ,
  • Yang-Ting ,
  • ZHANG Jian
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Received date: 2014-09-03

  Online published: 2015-12-23

摘要

采用无电镀Pd的方法,在硅纳米线上制备了一层Pd.首次制备出了能够在室温下工作的Pd/SiNWs肖特基氢气传感器.SEM(Scanning Electron Microscopy)(扫描电子显微镜)表征结果表明,硅纳米线表面Pd层是由Pd纳米颗粒组成.Pd/SiNWs肖特基二极管I-V测试结果表明,该传感器可以在室温下进行氢气(H2)浓度的检测,且可检测的浓度范围很大,同时给出了Pd/SiNWs/pSi 肖特基二极管在常温下进行检测H2的敏感机理.实验表明,这种新型传感器可以在室温下进行H2检测,且具有很大的发展潜力,可以应用于燃料电池等诸多领域.

本文引用格式

朱李斯 , 杨婷 , 张健 . 基于Pd/SiNWs/pSi结构的高灵敏常温氢气传感器[J]. 华东师范大学学报(自然科学版), 2015 , 2015(6) : 81 -89 . DOI: 10.3969/j.issn.1000-5641.2015.06.011

Abstract

Silicon nanowires (SiNWs) coated by palladium layer via electroless plating technique had been prepared. And the Pd/SiNWs Schottky barrier hydrogen sensors capable of operating at room temperature for the first time were conducted. Scanning electron microscopy (SEM) analysis showed that Pd thin films composed of nanoparticles were coated on the silicon nanowire surface. The 〖WTBX〗IV〖WTBZ〗 curves of Pd/SiNWs Schottky barrier hydrogen sensor were measured. The results indicated that under room temperature the sensor can sense hydrogen in a wide range of concentration. The sensing mechanism of the Pd/SiNWs barrier hydrogen sensor was also provided. The sensor developed had great potentials for the detection of hydrogen at room temperature and can be used in the cases like fuel cells application.

参考文献

[1]CHRISTOFIDES C, MANDELIS A. Solidsstate sensors for trace hydrogen gas detection [J]. Applied Physics, 1990, 68: 130. 

[2]LI Z F , BLUMB F D, BERTINO M F, et al. Understanding the response of nanostructured polyaniline gas sensors [J]. Sensors and Actuators B: Chemical, 2013, 183: 419427.

[3]LUNDSTROM I, SHIVARAMAN M S, SVENSSON C S, et al. Hydrogen sensitive MOS fieldeffect transistor[J] . Applied Physics Letters , 1975, 26: 5557.

[4]LUNDSTROM I, SHIVARAMAN M S, SVENSSON C S. A hydrogensensitive Pdgate MOS transistor [J]. Applied Physics, 1975, 46: 38763881.

[5]RAZI F, IRAJIZAD A, RAHIMI F. Investigation of hydrogen sensing properties and aging effects of Schottky like Pd/porous Si[J]. Sensors and Actuators B: Chemical, 2010, 146: 5360.

[6]RAHIMI F, IRAJIZAD A. Characterization of Pd nanoparticle dispersed over porous silicon as a hydrogen sensor[J]. Physics D: Applied Physics, 2007, 40: 72017209.

[7]RAHIMI F, LRAJIZAD A, RAZI F. Characterization of porous polysilicon impregnated with Pd as a hydrogen sensor[J]. Physics D: Applied Physics, 2005, 38: 3640.

[8]SUN X, QIAO L, WANG X Y. A novel immunosensor based on au nanoparticles and polyaniline/multiwall carbon nanotubes/chitosan nanocomposite film functionalized interface[J]. NanoMicro Letters, 2013,5(3):191201. 

[9]CHENG S Y. A hydrogen sensitive Pd/GaAs Schottky diode sensor[J]. Materials Chemistry and Physics, 2002, 78:525528.

[10]NADERI N, HASHIM M R, AMRAN T S T. Enhanced physical properties of porous silicon for improved hydrogen gas sensing[J]. Superlattices and Microstructures, 2012, 51: 626634.

[11]LI Y, LI X G, TANG Z Y, et al. Hydrogen sensing of the mixedpotentialtype MnWO4/YSZ/Pt sensor[J]. Sensors and Actuators B: Chemical,  2014, 206: 176180.

[12]RYGER I, VANKO G, LALINSKY T, et al. Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability[J]. Sensors and Actuators B: Chemical, 2014, 202: 18.

[13]RAHIMI F, IRAJIZAD A. Effective factors on Pd growth on porous silicon by electrolessplating: Response to hydrogen[J]. Sensors and Actuators B: Chemical, 2006, 115: 164169.

[14]JEWELL L L, DAVIS B H. Review of absorption and adsorption in the hydrogenpalladium system[J]. Applied Catalysis AGeneral, 2006, 310: 115.

[15]KUMAR M K, RAMACHANDRAM S, Rao, AMAPRABHU  S R. Structural, morphological and hydrogen sensing studies on pulsed laser deposited nanostructured palladium thin films[J]. Physics D: Applied Physics , 2006, 39: 27912795.
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