物理学与电子学

基于太阳能切削硅粉制备Eu2+激发的直接白光荧光粉及其发光特性研究

  • 于欣阳 ,
  • 蔡亚果 ,
  • 孙卓 ,
  • 朴贤卿
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  • 1. 华东师范大学 纳光电集成与先进装备教育部工程中心, 上海 200062;
    2. 上海产业技术研究院, 上海 201206
于欣阳,女,硕士研究生,研究方向为稀土发光材料.E-mail:yxy_910817@163.com.

收稿日期: 2017-03-20

  网络出版日期: 2018-03-22

基金资助

华东师范大学研究生科研创新实践资助项目(40600-511232-16203/013/029/001)

Luminescence characteristics of Eu2+-activated white-emitting phosphor prepared from solar cell cutting Si powder

  • YU Xin-yang ,
  • CAI Ya-guo ,
  • SUN Zhuo ,
  • PIAO Xian-qing
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  • 1. Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062, China;
    2. Shanghai Industrial Technology Institute, Shanghai 201206, China

Received date: 2017-03-20

  Online published: 2018-03-22

摘要

以单晶硅太阳能电池切削产生的硅泥为原料,通过氨氮化工艺高温烧结制备了Eu2+激发的直接白光荧光粉,研究了Eu2+掺杂浓度对荧光粉发光性能的影响.物相分析结果显示,所合成的荧光粉为混合物,主要晶相为Ca2SiO4、CaSiO3和Ca2Si5N8.通过分析荧光光谱,发现荧光粉的有效激发范围为300~450 nm.在370nm近紫外光激发下,荧光粉中主要存在两个发光中心,分别位于470nm和570 nm,发光颜色趋近于白光,色坐标为(0.327 5,0.386 6),色温为5705 K(5 431.85℃).通过改变Eu离子掺杂浓度发现:荧光粉发光强度先增大后减小,最佳Eu2+掺杂量为10.0 mol%;超过最佳掺杂浓度,由于离子间的相互作用导致浓度淬灭.通过单一荧光粉配合紫外芯片激发可直接获得白光输出.

本文引用格式

于欣阳 , 蔡亚果 , 孙卓 , 朴贤卿 . 基于太阳能切削硅粉制备Eu2+激发的直接白光荧光粉及其发光特性研究[J]. 华东师范大学学报(自然科学版), 2018 , 2018(2) : 115 -124 . DOI: 10.3969/j.issn.1000-5641.2018.02.012

Abstract

Eu2+-activated white-emitting phosphors were synthesized by the process of ammonia nitridation at high temperature with the raw material of silicon powder from crystalline silicon solar cells cutting sludge. The effect of Eu2+ doping concentrations on structural and luminescent properties of phosphors was studied in detail. It turns out that the principal crystalline phase of the sample is the mixture of Ca2SiO4, CaSiO3 and Ca2Si5N8. These phosphors can be effectively excited in the range of 300~450 nm, showing intense absorption in ultraviolet to near-ultraviolet region. In addition, they exhibit intense white emissions with CIE (Commission Internationale de L'Eclairage) coordinates of (0.327 5, 0.386 6) under 370 nm excitation with color temperature of 5 705 K(5 431.85℃). There are two luminescence centers in the host, which locate at 470 nm and 570 nm, respectively. With the increase of the doping concentration of Eu2+, the emission reaches an intensity saturation and the optimum doping content of Eu2+ is 10.0 mol% due to the interaction among the activator ions which result in an concentration quenching. Using such a single phosphor, a white light output can be directly achieved combined with UV chip.

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