物理学与电子学

一种可重构有源滤波器芯片设计

  • 余俊伟 ,
  • 刁盛锡
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  • 华东师范大学 通信与电子工程学院, 上海 200241

收稿日期: 2020-12-25

  网络出版日期: 2022-03-28

Design of a reconfigurable active filter chip

  • Junwei YU ,
  • Shengxi DIAO
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  • School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China

Received date: 2020-12-25

  Online published: 2022-03-28

摘要

近年来, 多模多带收发机的研究成为了研究热点, 而软件定义无线电系统是一个很好的候选方案. 为了减小带外干扰对软件无线电系统收发机性能产生的负面影响, 提出了一个可调带宽、可调增益的高带外抑制中频滤波器. 该滤波器由双二次Gm-C滤波器、增益提高级、5阶椭圆滤波器组成. 滤波器增益的调节通过双二次Gm-C滤波器和增益提高级实现, 带宽的调节通过开关电容阵列实现. 同时, 为了提高带外抑制, 增加了一级5阶椭圆滤波器. 后仿真结果表明, 滤波器带宽在1 MHz ~ 30 MHz可调, 2倍带宽频率的带外抑制最小值达到了44.56 dB, 增益控制范围为–20 dB ~ 20 dB, 模拟部分的功耗和核心面积分别为5.1 mW和1.23 mm2. 提出的滤波器可适用于多种模式通信设备中的模拟前端.

本文引用格式

余俊伟 , 刁盛锡 . 一种可重构有源滤波器芯片设计[J]. 华东师范大学学报(自然科学版), 2022 , 2022(2) : 143 -154 . DOI: 10.3969/j.issn.1000-5641.2022.02.017

Abstract

Recently, research on multi-mode, multi-band transceivers has garnered significant interest; in this context, the Software-Define Radio (SDR) system is considered a good candidate. To reduce the negative influence of out-of-band interference on transceiver performance of the SDR system, a high out-of-band rejection IF (intermediate frequency) filter with tunable bandwidth and programable gain is proposed. The proposed filter consists of a biquadratic Gm-C filter, a gain-boosting stage, and a 5th-order elliptic filter. In the proposed filter, the variable gain is achieved using a biquadratic Gm-C filter and a gain-boosting stage, and the tunable bandwidth is achieved using capacitor arrays. In addition, a 5th-order elliptic filter is added to improve out-of-band rejection. The post-layout simulation shows that the bandwidth is tuned over a range of 1 MHz–30 MHz, and the minimum out-of-band rejection at twice the bandwidth reaches 44.56 dB. The gain control range is from –20 dB to 20 dB, and the power consumption and active area for the analog counterpart is 5.1 mW and 1.23 mm2, respectively. The proposed filter is suitable for the analog front-end of multi-mode communication terminals.

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