华东师范大学学报(自然科学版) ›› 2010, Vol. 2010 ›› Issue (3): 57-62.

• 应用物理 电子学 • 上一篇    下一篇

纳米级Sr2FeMoO6/CeO2复合材料磁致电阻效应研究

李相虎，李丹
   

  1. 武汉工业学院 数理科学系，武汉 430023
  • 收稿日期:2009-06-17 修回日期:2009-09-15 出版日期:2010-05-25 发布日期:2010-05-25
  • 通讯作者: 李相虎

Enhanced low field magnetoresistance in nanostructured Sr2FeMoO6/CeO2 composites

LI Xiang-Hu, LI Dan   

  1. Department of Mathematics and Physics, Wuhan Polytechnic University, Wuhan 430023, China
  • Received:2009-06-17 Revised:2009-09-15 Online:2010-05-25 Published:2010-05-25
  • Contact: LI Xiang-Hu

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摘要： 研究具有纳米级晶粒尺寸的(Sr2FeMoO6)1- x/(CeO2) x 复合材料的电输运性质.发现其低场磁致电阻效应在整个温区内要高于纯Sr2FeMoO6/CeO2多晶材料.外加磁场为2 kOe时，x=0.3的复合材料在10 K与300 K的磁致电阻分别为纯SFMO样品的1.7与1.3倍.表明载流子在晶界处的隧穿效应加强了其磁致电阻效应.

关键词: 溶胶凝胶法, Sr2FeMoO6, 磁致电阻, 溶胶凝胶法, Sr2FeMoO6, 磁致电阻

Abstract: The electric transport properties of the nanostructrued (Sr2FeMoO6)1- x/(CeO2) xcomposition were investigated. It was found that the lowfield magnetoresistance of the composition is higher than that of the pure Sr2FeMoO6/CeO2 material in the whole region of temperature. The magnetoresistance ratios at 10 K and 300 K with H=2 kOe for the x =0.3 sample are 1.7 times and 1.3 times as large as that for the pureSr2FeMoO6, respectively. This means that the spin dependent tunneling at the interfaces of grain boundaries is responsible for the enhanced MR.

Key words: Sr2FeMoO6, magnetoresistance, Sol gel method, Sr2FeMoO6, magnetoresistance

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