华东师范大学学报(自然科学版) ›› 2013, Vol. 2013 ›› Issue (3): 194-201.

• 电子科学与计算机科学 • 上一篇    下一篇

硅纳米电极超低电压场致电离特性研究

陈 云1,2, 张 健1, 于江江1, 郑小东1   

  1. 1.华东师范大学 电子工程系,上海 200241; 2.南通大学 电子信息学院,江苏 南通 226019
  • 收稿日期:2012-09-01 修回日期:2012-12-01 出版日期:2013-05-25 发布日期:2013-07-10

Ultralow-voltage field ionization of silicon nano-electrode

CHEN Yun1,2, ZHANG Jian1, YU Jiang-jiang1, ZHENG Xiao-dong1   

  1. 1. Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
    2. School of Electronics and Information, Nantong University, Nantong Jiangsu 226019, China
  • Received:2012-09-01 Revised:2012-12-01 Online:2013-05-25 Published:2013-07-10

摘要: 用湿法化学刻蚀制备出具有直立结构的硅纳米线,其平均长度为20 μm,平均直径100 nm.将该硅纳米线作为电容式电离结构的一维纳米电极,建立场致电离的测试系统,并在常温常压下测试出电离的全伏安特性,得出了一维纳米电极系统气体电离的规律.测试结果表明,利用湿法化学刻蚀制备的硅纳米线作为一维纳米电极,可以大大降低系统的击穿电压,原因在于它具有较高的场增强因子、小尺寸效应以及高的缺陷密度.

关键词: 硅纳米线, 场致电离, 击穿电压, 湿法化学刻蚀

Abstract: By using method of wet chemical etching, a kind of straight aligned silicon nanowires (SiNWs) was prepared, with average length and diameter about 20 μm and 100 nm, respectively. Then 1D SiNWs were used as the nano-electrode of capacitive ionization structure in a test system of ionization, to test the full volt ampere characteristics of ionization. The test results show that the as-grown SiNWs acting as one of the nano-electrode can reduce the breakdown voltage of power system greatly, because the as-grown SiNWs have large field enhancement factor, small size effect and high defect density.

Key words: silicon nanowires (SiNWs), field ionization, breakdown voltage, wet chemical etching

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