硅纳米电极超低电压场致电离特性研究

华东师范大学学报(自然科学版) ›› 2013, Vol. 2013 ›› Issue (3): 194-201.

• 电子科学与计算机科学 • 上一篇下一篇

硅纳米电极超低电压场致电离特性研究

陈云^1,2, 张健¹, 于江江¹, 郑小东¹

1.华东师范大学电子工程系,上海 200241； 2.南通大学电子信息学院,江苏南通 226019

收稿日期:2012-09-01 修回日期:2012-12-01 出版日期:2013-05-25 发布日期:2013-07-10

Ultralow-voltage field ionization of silicon nano-electrode

CHEN Yun^1,2, ZHANG Jian¹, YU Jiang-jiang¹, ZHENG Xiao-dong¹

1. Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
2. School of Electronics and Information, Nantong University, Nantong Jiangsu 226019, China

Received:2012-09-01 Revised:2012-12-01 Online:2013-05-25 Published:2013-07-10

摘要/Abstract

摘要： 用湿法化学刻蚀制备出具有直立结构的硅纳米线，其平均长度为20 μm，平均直径100 nm.将该硅纳米线作为电容式电离结构的一维纳米电极，建立场致电离的测试系统，并在常温常压下测试出电离的全伏安特性，得出了一维纳米电极系统气体电离的规律.测试结果表明，利用湿法化学刻蚀制备的硅纳米线作为一维纳米电极，可以大大降低系统的击穿电压，原因在于它具有较高的场增强因子、小尺寸效应以及高的缺陷密度.

关键词: 硅纳米线, 场致电离, 击穿电压, 湿法化学刻蚀

Abstract: By using method of wet chemical etching, a kind of straight aligned silicon nanowires (SiNWs) was prepared, with average length and diameter about 20 μm and 100 nm, respectively. Then 1D SiNWs were used as the nano-electrode of capacitive ionization structure in a test system of ionization, to test the full volt ampere characteristics of ionization. The test results show that the as-grown SiNWs acting as one of the nano-electrode can reduce the breakdown voltage of power system greatly, because the as-grown SiNWs have large field enhancement factor, small size effect and high defect density.

Key words: silicon nanowires (SiNWs), field ionization, breakdown voltage, wet chemical etching

中图分类号:

陈云, 张健, 于江江, 郑小东. 硅纳米电极超低电压场致电离特性研究[J]. 华东师范大学学报(自然科学版), 2013, 2013(3): 194-201.

CHEN Yun, ZHANG Jian, YU Jiang-jiang, ZHENG Xiao-dong. Ultralow-voltage field ionization of silicon nano-electrode[J]. Journal of East China Normal University(Natural Sc, 2013, 2013(3): 194-201.

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硅纳米电极超低电压场致电离特性研究

Ultralow-voltage field ionization of silicon nano-electrode

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