华东师范大学学报(自然科学版) ›› 2012, Vol. 2012 ›› Issue (5): 1-9.

• 应用物理,电子学 •    下一篇

覆镍硅微通道板用于三维超级电容器的研究

刘 涛, 王 斐, 徐少辉, 王连卫   

  1. 华东师范大学 电子工程系 极化材料与器件教育部重点实验室,上海 200241
  • 收稿日期:2011-12-01 修回日期:2012-03-01 出版日期:2012-09-25 发布日期:2012-09-29

Three-dimensional nickel-coated silicon microchannel plates for supercapacitors

LIU Tao, WANG Fei, XU Shao-hui, WANG Lian-wei   

  1. Laboratory of Polar Materials and Devices, Ministry of Education, and Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
  • Received:2011-12-01 Revised:2012-03-01 Online:2012-09-25 Published:2012-09-29

摘要: 采用无电镀方法在硅微通道板上制备镍,然后进一步通过化学液相沉积法,在其上面制备了氢氧化镍纳米晶体,获得了一种具有独特三维结构的Si-MCP/Ni/Ni(OH)2超级电容器.研究发现,制得的氢氧化镍晶体由许多纳米薄片组成,XRD图谱显示其具备α和β两种晶型.通过循环伏安和计时电位法对该超级电容器进行了性能测试.在放电电流为10 mA时,样品获得最大放电比容量,为2 150 F/g.在多次循环测试中,样品的稳定性良好.随着退火温度的升高,样品的容量下降.研究发现氢氧化镍的表面积减小是导致容量衰减的主要原因.由于该电容器有着巨大的比容量和良好的稳定性,该三维结构有望应用于二次电源和相关器件中.

关键词: 三维, 硅微通道板, 氢氧化镍, 超级电容器

Abstract: A unique three-dimensional Si-MCP/Ni/Ni(OH)2 structure for supercapacitor was produced. Chemical liquid deposition was carried out to grow nano-sized Ni(OH)2. The as-prepared Ni(OH)2 film consists of many intertwined nano-flakes with both the α- and β-Ni(OH)2 phases. The formation mechanism of Ni(OH)2 was introduced. The as-prepared and annealed materials were evaluated electrochemically by cyclic voltammetry and chronopotentiometry. The cyclic voltammetry results reveals a typical redox characteristic of the sample. A specific capacitance of 2 150 F/g was observed at a discharge current of 10 mA, and the structure has high stability in prolonged charging and discharging experiments. The capacitance of the annealed sample decreases as the annealing temperature increases. Surface morphology of the samples after 2 000 cycles and annealed samples were observed. Decrease of the surface area of Ni(OH)2 is consi-dered as the main reason of the capacitive loss. Owing to the large specific capacitance and good stability, the unique structure is suitable for electrochemical super-capacitors used in secondary power sources and devices.

Key words: three-dimensional, silicon microchannel plate, nickel hydroxide, supercapacitors

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