华东师范大学学报(自然科学版) ›› 2026, Vol. 2026 ›› Issue (2): 117-127.doi: 10.3969/j.issn.1000-5641.2026.02.011

• 电源管理与数据转换器 • 上一篇    

一种面向音频应用的高精度三阶噪声整形SAR ADC设计

耿楠楠, 王济坤, 韩守祥, 石春琦*()   

  1. 华东师范大学 微电子电路与系统研究所, 上海 200241
  • 收稿日期:2025-10-29 接受日期:2026-01-16 出版日期:2026-03-25 发布日期:2026-04-03
  • 通讯作者: 石春琦 E-mail:cqshi@ee.ecnu.edu.cn
  • 基金资助:
    上海市科委资助项目 (22DZ2229004)

Design of a high-precision third-order NS SAR ADC for audio applications

Nannan GENG, Jikun WANG, Shouxiang HAN, Chunqi SHI*()   

  1. Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai 200241, China
  • Received:2025-10-29 Accepted:2026-01-16 Online:2026-03-25 Published:2026-04-03
  • Contact: Chunqi SHI E-mail:cqshi@ee.ecnu.edu.cn

摘要:

面向音频领域应用, 提出了一种高精度三阶噪声整形 (NS) 逐次逼近型(SAR)模数转换器(ADC)设计. 针对无源噪声整形电路因增益损失导致噪声整形效果恶化的问题, 设计了一款级联积分前馈型(CIFF)有源噪声整形环路; 为了减小积分电路的非线性对ADC产生影响, 提出了一种主-辅双路高线性度源跟随器结构. 通过该源跟随器将残差电压缓冲在积分电容上, 最终实现了三阶噪声整形效果; 同时为减小由于数模转换器(DAC)失配引起的非线性的影响, 在电路中还采用了电容失配误差整形(MES)技术. 该款ADC采用55 nm CMOS工艺实现, 核心版图面积约为0.25 mm2, 芯片后仿真结果表明: 在40℃, 1.8 V电源电压, 采样频率为8 MS/s, 带宽为125 kHz, 功耗为10.83 mW时, ADC有效位数(ENOB)为15.14 bit, 信噪失真比(SNDR)为92.92 dB, 品质因子 (FoMS) 为163.54 dB.

关键词: 噪声整形SAR ADC, 源跟随器, 电容堆叠, ping-pong结构, 失配误差整形

Abstract:

This paper proposes the design of a high-precision third-order noise-shaping (NS) successive approximation register (SAR) analog-to-digital converter (ADC) for audio applications. The NS effect of passive NS circuits deteriorates owing to gain loss. In response, a cascaded integral feed-forward (CIFF) active NS loop is designed. To mitigate the impact of integrator nonlinearity on the ADC, a primary-auxiliary dual-path high-linearity source follower structure is proposed. This source follower buffers the residual voltage onto the integration capacitor, ultimately achieving third-order NS performance. A mismatch error shaping (MES) technique is incorporated to mitigate nonlinearities induced by digital-to-analog converter (DAC) mismatches. Fabricated in a 55 nm CMOS process, the ADC core occupies approximately 0.25 mm2. Post-layout simulation results demonstrate that under a 1.8 V supply voltage at 40℃, while operating at a sampling frequency of 8 MS/s with a bandwidth of 125 kHz and consuming 10.83 mW of power, the ADC achieves an effective number of bits (ENOB) of 15.14 and a signal-to-noise and distortion ratio (SNDR) of 92.92 dB with a Schreier figure of merit (FoMS) of 163.54 dB.

Key words: NS SAR ADC, source follower, capacitor stacking, ping-pong architecture, MES

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