一款基于源栅耦合变压器技术的70.3~86.6 GHz宽带低噪声放大器

doi:10.3969/j.issn.1000-5641.2026.02.007

摘要/Abstract

摘要：

本文研究了一款70.3~86.6 GHz的低噪声放大器 (Low-Noise Amplifier, LNA), 可同时应用于E波段通信和77 GHz汽车雷达. LNA采用三级差分结构, 降低共模噪声带来的不利影响. 输入级采用基于源栅耦合变压器的噪声抵消技术及等效跨导增强技术, 在降低噪声的同时提高增益, 结合单端转差分巴伦, 实现输入阻抗匹配和最优噪声匹配. 中间级采用带有中和电容的共源结构, 提高稳定性和增益. 输出级采用共源共栅结构, 通过共栅短接技术提高增益, 采用双中和电容技术抑制寄生效应, 提高稳定性与增益, 同时在共栅管源极和共源管漏极之间加入电感, 抑制寄生效应, 拓展截止频率. 芯片仿真结果表明: 该款低噪声放大器最高增益为22.54 dB, 3 dB带宽为70.3~86.6 GHz, 工作频段内最小噪声系数为5.48 dB, 且频段内噪声波动小于0.69 dB, 输入和输出反射系数均小于–8.5 dB, 输入1 dB增益压缩点(IP1dB)为–16.39 dBm.

关键词: 低噪声放大器, 毫米波, 宽带

Abstract:

A 70.3~86.6 GHz low-noise amplifier (LNA) was investigated, which can be applied simultaneously to E-band communication and 77 GHz automotive radar systems. The LNA employs a three-stage differential architecture to suppress common-mode noise. In the input stage, a source-gate-coupled-transformer-based noise-cancellation and equivalent transconductance enhancement technique is implemented to simultaneously reduce noise and boost gain. Together with a single-ended-to-differential balun, the input network achieves both impedance and optimal noise matching. The intermediate stage uses a common-source configuration with neutralization capacitors to improve gain and stability, while the output stage employs a cascode topology with a common-gate short-circuit technique and dual neutralization capacitors scheme to mitigate parasitic effects and further enhance gain and stability. Additionally, an inductor is introduced between the source of the common-gate transistor and the drain of the common-source transistor to alleviate parasitic effects and extend the cutoff frequency. Simulation results demonstrate that the proposed LNA achieves a peak gain of 22.54 dB, a 3 dB bandwidth covering 70.3~86.6 GHz, and a minimum noise figure of 5.48 dB, with noise variation less than 0.69 dB across the operating band. The input and output return losses are both better than those at –8.5 dB, and the input 1 dB compression point (IP1dB) is –16.39 dBm.

Key words: low-noise amplifier, millimeter wave, broadband

中图分类号:

TN432

曹乐颖, 汪扬阳, 舒雨欣, 张润曦. 一款基于源栅耦合变压器技术的70.3~86.6 GHz宽带低噪声放大器[J]. 华东师范大学学报（自然科学版）, 2026, 2026(2): 71-81.

Leying CAO, Yangyang WANG, Yuxin SHU, Runxi ZHANG. A 70.3~86.6 GHz broadband low-noise amplifier utilizing source-gate-coupled-transformer technique[J]. J* E* C* N* U* N* S*, 2026, 2026(2): 71-81.

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数据来源	工艺	工作频段/GHz	带宽/GHz	NF/dB	增益/dB	IP1dB/dBm	功耗/mW	FOM
2025 JSSC^[19]	40 nm CMOS	70~86	16.0	4.8~6.5	16.50	–8.50	25.0	2.12
2025 RFIC^[20]	40 nm CMOS	50~68	18.0	5.6~10.0	26.20	–35.00	164.0	0.85
2024 ISCAS^[18]	28 nm CMOS	70~110	40.0	6.1	15.10	–14.00	60.6	1.22
本文	40 nm CMOS	70.3~86.6	16.3	5.48~6.17	22.54	–16.39	32.3	2.71

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