华东师范大学学报(自然科学版) ›› 2007, Vol. 2007 ›› Issue (3): 135-140.

• 物理学 电子学 • 上一篇    

两步法制备性能优良的ZnO纳米线

张秋香1， 张永胜1，2， 白 伟1， 郁可1， 朱自强1
  

  1. 1.华东师范大学 电子科学技术系， 上海 200062； 2.洛阳工业高等专科学校 计算机系，河南 洛阳 471003
  • 收稿日期:2006-06-07 修回日期:2006-08-16 出版日期:2007-05-25 发布日期:2007-05-25
  • 通讯作者: 朱自强

Excellent Characteristics of ZnO Nanowires Synthesized by Two Step Method (Chinese)

ZHANG Qiu-xiang1, ZHANG Yong-sheng1,2,BAI Wei1, YU Ke1, ZHU Zi-qiang1
  

  1. 1. Department of Electronic Science and Technology, East China Normal University, Shanghai 200062, China;2. Department of Computer, Luoyang Technology College, Luoyang Henan 471003, China
  • Received:2006-06-07 Revised:2006-08-16 Online:2007-05-25 Published:2007-05-25
  • Contact: ZHU Zi-qiang

摘要： 利用热蒸发和溶液浸泡两步法制备了性能优良的ZnO纳米线，研究了这些ZnO纳米线的光致发光和场发射特性.与直接采用热蒸发方法生长的ZnO纳米线相比，由该方法得到的ZnO纳米线表现出了更好的紫外发光特性，同时发生5 nm的蓝移，场发射测试表明其开启电场和阈值电场分别达到2.3 V/μm和6.8 V/μm.该方法适用于制备光致发光和场发射性能优良的ZnO纳米线.

关键词: ZnO纳米线, 光致发光, 场发射, ZnO纳米线, 光致发光, 场发射

Abstract: ZnO nanowires with excellent properties were synthesized by twostep method. Photoluminescence (PL) measurements showed that the ZnO nanowires
have stronger ultraviolet emission properties at 376 nm and there is a
5 nm blue shift after being immersed in thiourea (TU) solution compared with those of without immersion. The immersed ZnO nanowires show a turnon field of 2.3 V/μm at a current density of 0.1 μA/cm2 and emission current density up to 1 mA/cm2 at an applied field of 6.8 V/μm, which are 2.7 V/μm and 7.9 V/μm for those of without being immersed, respectively.
So this method may be an effective method to improve the characteristics
of ZnO nanowires.

Key words: photoluminescence, field emission, ZnO nanowires, photoluminescence, field emission

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