华东师范大学学报(自然科学版) ›› 2026, Vol. 2026 ›› Issue (2): 25-34.doi: 10.3969/j.issn.1000-5641.2026.02.003

• 射频前端与毫米波集成电路 • 上一篇    下一篇

一种高隔离度、宽带增益K波段收发阵列天线设计

周洋, 蒋哲奥, 朱越, 张润曦*()   

  1. 华东师范大学 微电子电路与系统研究所, 上海 200241
  • 收稿日期:2025-10-24 出版日期:2026-03-25 发布日期:2026-04-03
  • 通讯作者: 张润曦 E-mail:rxzhang@ee.ecnu.edu.cn
  • 基金资助:
    上海东方英才青年项目(15904-412214-24013)

Design of a K-band array antenna with high isolation and broadband gain

Yang ZHOU, Zhe’ao JIANG, Yue ZHU, Runxi ZHANG*()   

  1. Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai 200241, China
  • Received:2025-10-24 Online:2026-03-25 Published:2026-04-03
  • Contact: Runxi ZHANG E-mail:rxzhang@ee.ecnu.edu.cn

摘要:

微带梳状天线的辐射单元通常以平行微带形式排列, 因其单元间距固定且尺寸较小, 易用于大规模阵列设计, 但梳状阵列的带宽常受限于微带线谐振特性, 线性排列单元间易产生较高的交叉极化电平. 微带栅格阵列天线通过对称型单元排布和耦合设计, 能够实现更平坦的增益、更宽的阻抗带宽. 此外, 通过优化单元布局和馈电网络, 可以有效抑制旁瓣、改善极化纯度并降低传输损耗. 本文提出了一种K波段阵列天线, 集成串馈接收天线与串并馈发射天线于一体, 使用介电常数εr=2.2的RO5880材料作为介质基板, 采用切比雪夫分布对各单元进行非均匀激励以设计低旁瓣电平. 天线测试结果表明: 在23.0~24.3 GHz频段内天线整体增益达23.4 dBi, 阵列3 dB增益带宽覆盖23.02~24.08 GHz, 阵列间隔离度在工作频段内低于 –46 dB, 在中心频率23.5 GHz处, E面和H面的副瓣电平均低于 –15 dB, 该天线满足车载雷达、短距离高速率通信和5G基站等密集场景需求.

关键词: K波段, 微带栅格天线, 增益平坦性, 隔离度, 低副瓣

Abstract:

Microstrip comb antennas typically adopt parallel microstrip arrangements and are well suited for large-scale array designs because of their fixed element spacing and compact size. However, the bandwidth of comb arrays is often constrained by the resonant characteristics of microstrip lines, and the linear arrangement of elements can easily result in high cross-polarization levels. Microstrip grid array antennas, through symmetric element configurations and coupling design, can achieve flatter gain and broader impedance bandwidth. Furthermore, optimization of the element layout and feed network effectively suppresses sidelobes, improves polarization purity, and reduces transmission loss. This paper proposes a K-band array antenna that integrates a series-fed receiving and a series-parallel-fed transmitting antenna, employing Rogers RO5880 substrate with a dielectric constant of εr=2.2. A Chebyshev amplitude distribution is employed to realize non-uniform excitation of the elements for sidelobe reduction. Measurement results demonstrate that within the 23.0~24.3 GHz band, the antenna achieves an overall gain of 23.4 dBi, with a 3 dB gain bandwidth covering 23.02~24.08 GHz. The inter-array isolation remains below –46 dB across the operating band. At a center frequency of 23.5 GHz, the E-plane and H-plane sidelobe levels are both below –15 dB, indicating suitability for dense applications such as automotive radar, short-range high-data-rate communications, and 5G base stations.

Key words: K-band, microstrip grid antenna, gain flatness, high isolation, sidelobe reduction

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