Ultralow-voltage field ionization of silicon nano-electrode

Abstract

Abstract: By using method of wet chemical etching, a kind of straight aligned silicon nanowires (SiNWs) was prepared, with average length and diameter about 20 μm and 100 nm, respectively. Then 1D SiNWs were used as the nano-electrode of capacitive ionization structure in a test system of ionization, to test the full volt ampere characteristics of ionization. The test results show that the as-grown SiNWs acting as one of the nano-electrode can reduce the breakdown voltage of power system greatly, because the as-grown SiNWs have large field enhancement factor, small size effect and high defect density.

Key words: silicon nanowires (SiNWs), field ionization, breakdown voltage, wet chemical etching

CLC Number:

CHEN Yun, ZHANG Jian, YU Jiang-jiang, ZHENG Xiao-dong. Ultralow-voltage field ionization of silicon nano-electrode[J]. Journal of East China Normal University(Natural Sc, 2013, 2013(3): 194-201.

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