Journal of East China Normal University(Natural Sc ›› 2013, Vol. 2013 ›› Issue (3): 194-201.

• Article • Previous Articles     Next Articles

Ultralow-voltage field ionization of silicon nano-electrode

CHEN Yun1,2, ZHANG Jian1, YU Jiang-jiang1, ZHENG Xiao-dong1   

  1. 1. Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
    2. School of Electronics and Information, Nantong University, Nantong Jiangsu 226019, China
  • Received:2012-09-01 Revised:2012-12-01 Online:2013-05-25 Published:2013-07-10

Abstract: By using method of wet chemical etching, a kind of straight aligned silicon nanowires (SiNWs) was prepared, with average length and diameter about 20 μm and 100 nm, respectively. Then 1D SiNWs were used as the nano-electrode of capacitive ionization structure in a test system of ionization, to test the full volt ampere characteristics of ionization. The test results show that the as-grown SiNWs acting as one of the nano-electrode can reduce the breakdown voltage of power system greatly, because the as-grown SiNWs have large field enhancement factor, small size effect and high defect density.

Key words: silicon nanowires (SiNWs), field ionization, breakdown voltage, wet chemical etching

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