Journal of East China Normal University(Natural Sc ›› 2008, Vol. 2008 ›› Issue (3): 120-124.

• Article • Previous Articles    

Influence of Joule annealing on GMI effect for Co-based amorphous microwires(Chinese)

YUAN Li, YANG Xie-long, ZHAO Zhen-jie   

  1. Department of Physics，East China Normal University，Shanghai 200062, China
  • Received:2007-09-29 Revised:2008-01-22 Online:2008-05-25 Published:2008-05-25
  • Contact: ZHAO Zhen-jie

PDF

580

Abstract:

Co-based（Co69.20Fe4.16 Si12.35B10.77 Cr3.42 Mo0.1） amorphous microwires with 40 μm in diameter and 5 cm in length，were annealed by Joule current and by stress Joule annealing. The relationship between giant magneto-impedance effect and the density of annealing current and the intensity of stress was investigated. The results showde that the GMI ratios firstly increase then decrease with the increase of the density of current and the intensity of the stress. The maximum of sensitivity of GMI ratios to applied field is 1%/( A·m-1) at 20 A/mm2 and 90 MPa.The sensitivity of wires which were annealed with these conditions can be 19%/(A·m-1).

Key words: current annealing, stress annealing, GMI effect, amorphous microwires, current annealing, stress annealing, GMI effect

CLC Number: