A negatively charged VSiON center for implementation as qubit

doi:10.3969/j.issn.1000-5641.2017.02.013

Abstract

Abstract:

γ-Si₃N₄ is a nitrogen-based ultra-hard ceramic with Si atoms occupying both tetrahedral and octahedral sites in a spinel structure. Based on first-principles calculations, we investigate spin-polarized electronic structures and energetic stabilities of oxygenvacancy complex center (V_SiO_N) consisting of a substituted oxygen atom and an adjacent tetrahedrally coordinated silicon vacancy in spinel silicon nitride (γ-Si₃N₄) with different charge states. We find that the negatively charged V_SiO_N^-1 center is stable in the p-type γ-Si₃N₄ and the defect center possesses an S=1 triplet ground state and a spin-conserved excited state with low excitation energy. By using a mean-field approximation, we estimate that the spin coherence time of V_SiO_N is 0.4 s at T=0 K, which indicates that the V_SiO_N^-1 center is a promising candidate for spin coherent manipulation and qubit operation.

Key words: first-principles calculations, spin-polarized electronic structures, spin coherent time, qubit operation of color centers

CLC Number:

O469

SHEN Yu-hao, TANG Zheng, PENG Wei. A negatively charged V_SiO_N center for implementation as qubit[J]. Journal of East China Normal University(Natural Sc, 2017, 2017(2): 97-106.

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A negatively charged V_SiO_N center for implementation as qubit

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