Journal of East China Normal University(Natural Science) ›› 2020, Vol. 2020 ›› Issue (1): 83-92.doi: 10.3969/j.issn.1000-5641.201922006

• Physics and Electronics • Previous Articles     Next Articles

Novel polymer semiconductor films and related field effect transistor devices

YE Jianchun1, ZHOU Lizhao2, LI Wenwu2, OU-YANG Wei1   

  1. 1. Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China;
    2. Key Laboratory of Polar Materials and Devicesn, Ministry of Education, School of Physics and Electronic Science, East China Normal University, Shanghai 200241
  • Received:2019-03-19 Published:2020-01-13

Abstract: Thin films using a novel organic polymer semiconductor (DPPTTT(poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione) thieno [3,2-b] thiophene)) were prepared by a solution process and characterized through different techniques. It was found that the thickness, surface roughness, and Raman peak strength of the semiconductor films changed with the solution concentration and rotation rate. The polymer semiconductor was used to prepare the active layer for p-type organic field effect transistors; with these, the influence of channel length on critical transistor parameters (i.e., carrier mobility and threshold voltage) was studied. It was found that the effective carrier mobility was the highest at 0.12 cm2/Vs when the channel length was reduced to 50 μm. With a decrease in channel length, both carrier mobility and threshold voltage tended to increase, which was contrary to the short channel effect. This paper may provide new perspectives for better understanding the physics of field effect transistor devices.

Key words: organic field effect transistor, polymer semiconductor, solution process, short channel effect, contact resistance

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