J* E* C* N* U* N* S* ›› 2026, Vol. 2026 ›› Issue (2): 1-11.doi: 10.3969/j.issn.1000-5641.2026.02.001

• RF Front-Ends and Millimeter-Wave Integrated Circuits •    

A 28 GHz high power density and high gain Doherty power amplifier

Yangyang WANG, Leying CAO, Zhe’ao JIANG, Runxi ZHANG*()   

  1. Institute of Microelectronic Circuits and Systems, East China Normal University, Shanghai 200241, China
  • Received:2025-08-29 Online:2026-03-25 Published:2026-04-03
  • Contact: Runxi ZHANG E-mail:rxzhang@ee.ecnu.edu.cn

Abstract:

This study presents a 28 GHz, high power density, high gain, single-drive four-way Doherty power amplifier (PA) implemented in 40 nm complementary metal-oxide-semiconductor (CMOS) technology. By replacing conventional quadrature splitting networks with a distributed active transformer-based inter-stage quadrature divider, the proposed design achieves reduced insertion loss while significantly enhancing gain and power density. Additionally, a DAT-based single output transformer is introduced to simultaneously realize power combining and load modulation, achieving an optimized high-power-density PA architecture. Measurement results indicate that at 28 GHz, the PA delivers a saturated output power of 22.6 dBm, a 1 dB output compression point of 21.2 dBm, and a power added efficiency (PAE) of 20.5%, with a PAE of 14.2% at 6 dB power back-off. Under a 100 MHz orthogonal frequency-division multiplexing signal modulated with 64-quadrature amplitude modulation, the PA delivers an average output power of 13.5 dBm and an average PAE of 9% while satisfying an error vector magnitude (EVM) requirement of –25 dB. For a 400 MHz signal bandwidth, it maintains an average output power of 11.3 dBm and an average PAE of 8% under the same EVM specification. The core occupies an active area of only 0.38 mm2, corresponding to a power density of 0.48 W/mm2.

Key words: Doherty PA, power combining, load modulation

CLC Number: